sot223 npn silicon planar medium power transistor issue 3 ? august 1995 j features * suitable for af drivers and output stages * high collector current and low v ce(sat) complementary type ? bcp52 partmarking details ? bcp55 bcp55 ? 10 bcp55 ? 16 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5v peak pulse current i cm 1.5 a continuous collector current i c 1a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 60 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 60 v i c = 10ma * emitter-base breakdown voltage v (br)ebo 5v i e =10 m a collector cut-off current i cbo 100 20 na m a v cb =30v v cb =30v, t amb =150c emitter cut-off current i ebo 10 m a v eb =5v collector-emitter saturation voltage v ce(sat) 0.5 v i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.0 v i c =500ma, v ce =2v* static forward current transfer ratio h fe bcp55-10 bcp55-16 40 25 63 100 100 160 250 160 250 i c =150ma, v ce =2v* i c =500ma, v ce =2v* i c =150ma, v ce =2v* i c =150ma, v ce =2v* transition frequency f t 100 mhz i c =50ma, v ce =10v, f=100mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% bcp55 c c e b 3 - 17
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